Charge transfer and tunable ambipolar effect induced by assembly of Cu(II) binuclear complexes on carbon nanotube field effect transistor devices.
نویسندگان
چکیده
Assembly of paramagnetic Cu(2) complexes with a Schiff base scaffold possessing extended electron delocalization together with a quasi-planar structure onto carbon nanotubes induces a diameter-selective charge transfer from the complex to the nanotubes leading to an interestingly large and tunable ambipolar effect. We used complementary techniques such as electron paramagnetic resonance, absorption spectroscopy, and photoluminescence to ensure the success of the assembly process and the integrity of the complex in the nanohybrid. We carried out density functional theory type calculations to rationalize the experimental results, evidencing the selective enhanced interaction of the metal complexes with one type of nanotube.
منابع مشابه
Electrical-field-induced structural change and charge transfer of lanthanide-salophen complexes assembled on carbon nanotube field effect transistor devices.
The application of a negative gate voltage on a carbon nanotube field effect transistor decorated by a binuclear Tb(III) complex leads to the generation of a negatively charged mononuclear one, presenting an electron density transfer to the nanotube and ambipolar behaviour.
متن کاملSelf-heating effect modeling of a carbon nanotube-based fieldeffect transistor (CNTFET)
We present the design and simulation of a single-walled carbon nanotube(SWCNT)-based field-effect transistor (FET) using Silvaco TCAD. In this paper, theself-heating effect modeling of the CNT MOSFET structure is performed and comparedwith conventional MOSFET structure having same channel length. The numericalresults are presented to show the self-heating effect on the I...
متن کاملGate structural engineering of MOS-like junctionless Carbon nanotube field effect transistor (MOS-like J-CNTFET)
In this article, a new structure is presented for MOS (Metal Oxide Semiconductor)-like junctionless carbon nanotube field effect transistor (MOS-like J-CNTFET), in which dual material gate with different work-functions are used. In the aforementioned structure, the size of the gates near the source and the drain are 14 and 6 nm, respectively, and the work-functions are equal and 0.5 eV less tha...
متن کاملGate structural engineering of MOS-like junctionless Carbon nanotube field effect transistor (MOS-like J-CNTFET)
In this article, a new structure is presented for MOS (Metal Oxide Semiconductor)-like junctionless carbon nanotube field effect transistor (MOS-like J-CNTFET), in which dual material gate with different work-functions are used. In the aforementioned structure, the size of the gates near the source and the drain are 14 and 6 nm, respectively, and the work-functions are equal and 0.5 eV less tha...
متن کاملNon-volatile molecular memory elements based on ambipolar nanotube field effect transistors
We have fabricated air-stable n-type, ambipolar carbon nanotube field effect transistors (CNFETs), and used them in nanoscale memory cells. N-type transistors are achieved by annealing of nanotubes in hydrogen gas and contacting them by cobalt electrodes. Scanning gate microscopy reveals that the bulk response of these devices is similar to gold-contacted p-CNFETs, confirming that Schottky barr...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
- Journal of the American Chemical Society
دوره 134 18 شماره
صفحات -
تاریخ انتشار 2012